Witryna19 gru 2024 · IMPHEAT-II, a novel high temperature ion implanter for mass production of SiC power devices Authors (first, second and last of 23) WitrynaIMPHEAT IMPHEAT-II EXCEED 3000AH-8T EXCEED 3000AH-12T EXCEED 400HY Partner with Nissin As semiconductor processes become more and more complex, the need for smart, cost-effective …
American Vacuum Society
WitrynaIMPHEAT-II Ion species:Al+, P+, As+, B+, N+, and more Dose range:5E10–1E17 Energy:5keV–960keV RT–500°C substrate heating EXCEED400HY Ion … WitrynaThe IMPHEAT-II, a new high-temperature implanter for power semiconductors, is developed. 2024 An office building is added at the Shiga Plant. Relocated a function of head office to Toji Office. Company More History More Quality and Environment-Related Initiatives More Business Centers More > Company > History Company Company … cabane foot rossens
パワー半導体製造用高温イオン注入装置「IMPHEAT-Ⅱ」の納入 …
Witryna15 paź 2009 · IMPHEAT Trademark Trademark Overview On Thursday, October 15, 2009, a trademark application was filed for IMPHEAT with the United States Patent and Trademark Office. The USPTO has given the IMPHEAT trademark a serial number of 79076296. The federal status of this trademark filing is NOT AVAILABLE as of … Witryna23 lis 2024 · In this work, we present results of both p-type and n-type channeled implants into 4º offcut N-type SiC substrates and Epitaxial layers using a Nissin Ion Equipment IMPHEAT system. Witryna1 lut 2011 · An overview of silicon carbide (SiC) power device technology is given with an emphasis on processing issues and commercial applications. Schottky Barrier Diodes (SBDs) were the first to be made commercially available in 2001, with power switch and RF amplifiers soon to follow. cabane bonfol